Surface diffusion of Fe and island growth of FeSi2 on Si (111) surfaces

Thin Solid Films

Volumn 287, Issue 1-2, 1996, Pages 93-100

  Wohllebe, A ^a   Hollander B ^a   Mesters, S ^a   Dicker, C ^a   Crecelius, G ^a   Michelsen, W ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Ion scattering; Molecular beam epitaxy; Silicides; Surface diffusion

Indexed keywords

ACTIVATION ENERGY; DIFFUSION IN SOLIDS; EVAPORATION; FILM GROWTH; IRON; MOLECULAR BEAM EPITAXY; NUCLEATION; PHASE COMPOSITION; STOICHIOMETRY; SUBSTRATES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ION SCATTERING; SILICIDE PRECIPITATE GROWTH; SURFACE DENSITY; VENABLE'S THEORY;

SEMICONDUCTING FILMS;

EID: 0030264181     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08733-0     Document Type: Article

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