GaAs-based multiple quantum well tunneling injection lasers

Applied Physics Letters

Volumn 69, Issue 16, 1996, Pages 2309-2311

  Zhang, X ^a   Yuan, Y ^a   Gutierrez Aitken, A ^a   Bhattacharya, P ^a  

^a The Department of Civil and Environmental Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRON TUNNELING; FREQUENCY RESPONSE; MODULATION; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM ARSENIDE; DIFFERENTIAL GAIN; FEMTOSECOND DIFFERENTIAL TRANSMISSION SPECTROSCOPY; LIGHT CURRENT CHARACTERISTICS; MULTIPLE QUANTUM WELL TUNNELING INJECTION LASERS;

INJECTION LASERS;

EID: 0030263843     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117507     Document Type: Article

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