Effect of phosphorus doping on crystallization-induced stress of silicon thin films

JSME International Journal, Series A: Mechanics and Material Engineering

Volumn 39, Issue 4, 1996, Pages 620-625

  Miura, Hideo ^a   Nishimura, Asao ^a  

^a HITACHI LTD   (Japan)

Author keywords

Amorphous Silicon; Crystallization; Experimental Stress Analysis; Residual Stress; Thin Film

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; CRYSTALLIZATION; PHOSPHORUS; RESIDUAL STRESSES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; STRESS ANALYSIS; TENSILE STRENGTH; THERMAL EFFECTS; THIN FILMS;

CRYSTALLIZATION INDUCED STRESS;

SEMICONDUCTING FILMS;

EID: 0030263669     PISSN: 13408046     EISSN: None     Source Type: Journal    
DOI: 10.1299/jsmea1993.39.4_620     Document Type: Article

References (10)

1. Saito, N., Sakata, S. and Shimizu, T., Trans. Jpn. Soc. Mech. Eng., Vol. 57, No. 541, A (1991), p. 115.
2. Saito, N., Sakata, S., Shimizu, T., Isomae, S. and Masuda, H., Trans. Jpn. Soc. Mech. Eng., Vol. 55, No. 515, A (1991), p. 1652.
3. Miura, H., Ohta, H., Sakata, H. and Okamoto, N., Trans. Jpn. Soc. Mech. Eng., Vol. 58, No. 550, A (1992), p. 902.
4. Miura, H., Saito, N., Ohta, H. and Okamoto, N., Trans. Jpn. Soc. Mech. Eng., Vol. 59, No. 561, A (1993), p. 1213.
5. Miura, H., Ishitsuka, N., Saito, N., Ohta, H., Hashimoto, C. and Ikeda, S., Trans. Jpn. Soc. Mech. Eng., Vol. 60, No. 576, A (1994), p. 1807.
6. Ohta, H., Sakata, H., Zen, M., Miura, H. and Okamoto, N., Proc. of Asian Pacific Conference on Fracture and Strength '93, Tsuchiura, Japan, (1993), p. 735.
7. Murarka, S. P. and Retajczyk, T.F., J. Appl. Phys., Vol. 54, (1983), 2069.
8. Adamczewska, J. and Budzynski, T., Thin Solid Films, Vol. 113 (1984), p. 271.
9. Miura, H., Ohta, H., Okamoto, N. and Kaga, T., Trans. Jpn. Soc. Mech. Eng., Vol. 58, No. 554, A (1992), p. 1960.
10. Falckenberg, R., Doering, E. and Cppolzer, H., Proc. of Fall 1979 Electrochem. Soc. Meeting, Los Angeles, (1979), p. 1429.