Properties of gallium arsenide purified by zone refining and zone levelling

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 380, Issue 1-2, 1996, Pages 102-106

  Moore, W J ^a   Henry, R L ^a   Nordquist, P E R ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; ELECTRON ENERGY LEVELS; GAMMA RAY SPECTROMETERS; INFRARED SPECTROSCOPY; PURIFICATION; SEMICONDUCTOR DOPING; ZINC; ZONE MELTING;

ELECTRICALLY ACTIVE CENTERS; VERTICAL ZONE MELT PROCESS; ZONE LEVELLING; ZONE REFINING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030263454     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(96)00340-3     Document Type: Article

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