Modification of Fano resonances by resonant polaron coupling in bulk GaAs

Semiconductor Science and Technology

Volumn 11, Issue 10, 1996, Pages 1411-1415

  Bellani, V ^a   Vina L ^a   Hey, R ^b   Ploog, K ^b  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON RESONANCE; ELECTRONIC DENSITY OF STATES; ELECTRONS; EXCITONS; MAGNETIC FIELD EFFECTS; PHONONS; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

CONDUCTION BANDS; FANO ASYMMETRY; FANO RESONANCES; MAGNETO EXCITONIC DISCRETE STATES; MAGNETO EXCITONIC FANO LINESHAPES; QUANTUM INTERFERENCES; RESONANT POLARON COUPLING; VALENCE BANDS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030263110     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/10/010     Document Type: Article

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