Observation of resonant hole tunnelling through a (110) oriented AlAs/GaAs/AlAs quantum well

Semiconductor Science and Technology

Volumn 11, Issue 10, 1996, Pages 1424-1428

  Hayden, R K ^a   Takamasu, T ^a,d   Miura, N ^a   Henini, M ^b   Eaves, L ^b   Hill, G ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CURRENT VOLTAGE CHARACTERISTICS; HIGH ENERGY ELECTRON DIFFRACTION; MAGNETIC ANISOTROPY; MAGNETIC FIELDS; MOLECULAR BEAM EPITAXY; RESONANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SUBSTRATES;

ALUMINUM ARSENIDE; DOUBLE BARRIER DIODE; ORIENTED SUBSTRATES; RESONANT HOLE TUNNELING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030262956     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/10/012     Document Type: Article

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