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Volumn 11, Issue 10, 1996, Pages 1429-1433

Demonstration of wide-temperature-range electroabsorption modulation near 1.5 μm using coupled quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; INSTALLATION; LIGHT ABSORPTION; LIGHT MODULATION; LIGHT MODULATORS; SPECTRUM ANALYSIS; THERMAL EFFECTS;

EID: 0030262794     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/10/013     Document Type: Article
Times cited : (3)

References (11)
  • 2
    • 6144247447 scopus 로고
    • Temperature-dependent characteristics of GaAs/AlGaAs multiple-quantum-well optical modulators
    • Bailey R B, Sahai R, Lastufka C and Vural K 1989 Temperature-dependent characteristics of GaAs/AlGaAs multiple-quantum-well optical modulators J. Appl. Phys. 66 3445-52
    • (1989) J. Appl. Phys. , vol.66 , pp. 3445-3452
    • Bailey, R.B.1    Sahai, R.2    Lastufka, C.3    Vural, K.4
  • 3
    • 0027543045 scopus 로고
    • Interleaved-contact electroabsorption modulator using doping-selective electrodes with 25 °C to 95 °C operating range
    • Goossen K W, Cunningham J E, Jan W Y and Miller D A B 1993 Interleaved-contact electroabsorption modulator using doping-selective electrodes with 25 °C to 95 °C operating range IEEE Photon. Technol. Lett. 5 181-3
    • (1993) IEEE Photon. Technol. Lett. , vol.5 , pp. 181-183
    • Goossen, K.W.1    Cunningham, J.E.2    Jan, W.Y.3    Miller, D.A.B.4
  • 5
    • 6144232898 scopus 로고
    • Optimization of molecular beam epitaxy grown pin multiple quantum well electroabsorption modulators for the 1.5 μm wavelength region
    • Chang T Y, Sauer N J and He Y 1993 Optimization of molecular beam epitaxy grown pin multiple quantum well electroabsorption modulators for the 1.5 μm wavelength region J. Vac. Sci. Technol. B 11 929-31
    • (1993) J. Vac. Sci. Technol. B , vol.11 , pp. 929-931
    • Chang, T.Y.1    Sauer, N.J.2    He, Y.3
  • 7
    • 0029247703 scopus 로고
    • Nearly chirp-free electroabsorption modulation using InGaAs/InGaAlAs/InAlAs coupled quantum wells
    • Hou H Q and Chang T Y 1995 Nearly chirp-free electroabsorption modulation using InGaAs/InGaAlAs/InAlAs coupled quantum wells IEEE Photon. Technol. Lett. 7 167-9
    • (1995) IEEE Photon. Technol. Lett. , vol.7 , pp. 167-169
    • Hou, H.Q.1    Chang, T.Y.2
  • 8
    • 6144294122 scopus 로고
    • Theoretical analysis of enhanced electroabsorption related to transition from the second valence subband in wide lattice-matched quantum wells
    • Yamanaka T, Wakita K and Yokoyama K 1995 Theoretical analysis of enhanced electroabsorption related to transition from the second valence subband in wide lattice-matched quantum wells Appl. Phys. Lett. 67 3310-12
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 3310-3312
    • Yamanaka, T.1    Wakita, K.2    Yokoyama, K.3
  • 9
    • 0001199458 scopus 로고
    • Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells
    • Chao C Y-P and Chuang S L 1992 Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells Phys. Rev. B 46 4110-22
    • (1992) Phys. Rev. B , vol.46 , pp. 4110-4122
    • Chao, C.Y.-P.1    Chuang, S.L.2
  • 11
    • 0042098999 scopus 로고
    • Field-induced decoupling of quantized levels and blue shift of absorption edge in a potential inserted quantum well structure
    • Onose H, Yoshimura H and Sakaki H 1989 Field-induced decoupling of quantized levels and blue shift of absorption edge in a potential inserted quantum well structure Appl. Phys. Lett. 54 2221-3
    • (1989) Appl. Phys. Lett. , vol.54 , pp. 2221-2223
    • Onose, H.1    Yoshimura, H.2    Sakaki, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.