Direct determination of bare confinement potentials in AlGaAs/GaAs split-gate quantum wires by far-infrared spectroscopy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 10 PART A, 1996, Pages

  Wang, Shinan ^a   Yamanaka, Koji ^a   Hirakawa, Kazuhiko ^a   Noguchi, Mitsuhiro ^b   Ikoma, Toshiaki ^c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c Texas Instruments Japan Ltd   (Japan)

Author keywords

Electron confinement potential; Electronic states; Far infrared spectroscopy; Magnetotransport; Nanostructure; Quantum wire; Split gate

Indexed keywords

BAND STRUCTURE; ELECTRON RESONANCE; ELECTRONS; ELECTROSTATICS; INFRARED SPECTROSCOPY; MAGNETORESISTANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

FAR INFRARED (FIR) SPECTROSCOPY; KOHN'S THEOREM; PHOTORESPONSE; SPLIT GATE;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0030262573     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1249     Document Type: Article

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