Hydrofluoric-treated GaAs surfaces analyzed by contact angle measurement and auger electron spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 10, 1996, Pages 5293-5296

  Matsushita, Koichi ^a   Suzuki, Naoki ^a   Okuyama, Sumio ^a   Kumagai, Yasuji ^a  

^a YAMAGATA UNIVERSITY   (Japan)

Author keywords

AES; As layer; Contact angle; GaAs; HF; Surface oxide; Surface treatment; Water droplet

Indexed keywords

ARSENIC LAYER; CONTACT ANGLE MEASUREMENT; DIPPING; PLANAR ETCHING; SURFACE OXIDE; WATER DROPLET;

AUGER ELECTRON SPECTROSCOPY; CONTACT ANGLE; ETCHING; HYDROFLUORIC ACID; OXIDATION; OXIDES; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; SURFACE MEASUREMENT; SURFACE ROUGHNESS; SURFACES;

SURFACE TREATMENT;

EID: 0030262066     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.5293     Document Type: Article

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