Effects of growth temperature on solid incorporation of AlAs1-xSbx using tertiarybutylarsine as arsenic source precursor

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 10 PART A, 1996, Pages

  Chen, Wei Kuo ^a   Ou, Jehn ^a   Hsu, Ching Hao ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

AlAsSb; Incorporation efficiency; MOCVD

Indexed keywords

ARSENIC; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PYROLYSIS; REACTION KINETICS; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING ALUMINUM COMPOUNDS;

GROWTH TEMPERATURE; SOLID INCORPORATION; SOURCE PRECURSOR; TERTIARYBUTYLARSINE;

SEMICONDUCTOR GROWTH;

EID: 0030261989     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1234     Document Type: Article

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