Microcrystalline silicon films deposited by electron cyclotron resonance plasma chemical vapor deposition using helium gas

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 10 PART A, 1996, Pages

  Lee, Kyung Eon ^a   Lee, Wook Hyoung ^a   Shin, Sung Chul ^a   Lee, Choochon ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

ECR PCVD; Layer by layer technique; Microcrystalline silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; ELECTRON CYCLOTRON RESONANCE; FILM GROWTH; HELIUM; PLASMAS; SUBSTRATES; THERMAL EFFECTS; VOLUME FRACTION;

LAYER BY LAYER TECHNIQUE; MICROCRYSTALLINE SILICON FILMS;

AMORPHOUS SILICON;

EID: 0030261925     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1241     Document Type: Article

References (10)

1. A. Matsuda: J. Non-Cryst. Solids 59/60 (1983) 767.
2. C. C. Tsai, R. Thompson, C. Doland, F. A. Ponce, G. B. Anderson and B. Wacker: Mater. Res. Soc. Symp. Proc. 118 (1988) 49.
3. I. Schimizu, J. Hanna and H. Shirai: Mater. Res. Soc. Symp. Proc. 164 (1990) 195.
4. J. Jang, S.-C. Kim, K.-C. Park and S.-K. Kim: J. Appl. Phys. 75 (1994) 3184.
5. Y. Hattori, D. Kruangam, T. Toyama, H. Okamoto and Y. Hamakawa: Tech. Dig. PVSEC-3, ed. K. Takahashi (Tokyo, 1987) p. 171.
6. H. Kakinuma, M. Mohri, M. Sakamoto and T. Tsuruoka: J. Appl. Phys. 70 (1991) 7374.
7. A. Asano: Appl. Phys. Lett. 56 (1990) 533.
8. W. E. Beadle, J. C. C. Tsai and R. D. Plummer: Quick Reference Manual for Silicon Integrated Circuit Technology (John Wiley & Sons, New York, 1985) p. 6.
9. D. E. Carlson and C. W. Magee: Appl. Phys. Lett. 33 (1978) 81.
10. C. Godet, N. Layadi and P. Roca i Cabarrocas: Appl. Phys. Lett. 66 (1995) 3146.