Ion-assisted low-temperature (≤ 150 °C) epitaxial growth of TiN on Cu by reactive magnetron sputter deposition

Thin Solid Films

Volumn 287, Issue 1-2, 1996, Pages 87-92

  Ljungcrantz, H ^a   Benhenda, S ^a,b   Hakansson G ^a,c   Ivanov, I ^a   Hultman, L ^a   Greene, J E ^a,d   Sundgren, J E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF MOSTAGANEM   (Algeria)

^c Tixon AB   (Sweden)

^d University of Illinois at Urbana Champaign   (United States)

Author keywords

Epitaxy; Sputtering; Titanium nitride; Transmission electron microscopy

Indexed keywords

COPPER; CRYSTAL DEFECTS; CRYSTALLOGRAPHY; DENSIFICATION; EPITAXIAL GROWTH; FILM GROWTH; GRAIN SIZE AND SHAPE; LOW TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; POLYCRYSTALLINE MATERIALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CUBE ON CUBE EPITAXY; EPITAXIAL STRAIN; INTERFACIAL MISFIT; ION METAL RATIO; POLYCRYSTALLINE COPPER SUBSTRATES;

TITANIUM NITRIDE;

EID: 0030261479     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08741-X     Document Type: Article

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