SCOPUS 정보 검색 플랫폼

Optical and Quantum Electronics

Volumn 28, Issue 10, 1996, Pages 1327-1334

High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield

(4) Yuang, Rong Heng a Chyi, Jen Inn a Lin, Wei b Tu, Yuan Kuang b

a NATIONAL CENTRAL UNIVERSITY (Taiwan)

b Ministry of Transportation and Communications Taiwan (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; FABRICATION; FIELD EFFECT TRANSISTORS; GOLD; INTEGRATED OPTOELECTRONICS; LIGHTING; OPTICAL COMMUNICATION; OXIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

CADMIUM TIN OXIDE; INDIUM TIN OXIDE; LIGHTWAVE COMMUNICATION SYSTEM; LINEAR PHOTORESPONSE; METAL SEMICONDUCTOR METAL PHOTODETECTOR; SCHOTTKY CONTACTS;

PHOTODETECTORS;

EID: 0030261291 PISSN: 03068919 EISSN: None Source Type: Journal
DOI: 10.1007/BF00326205 Document Type: Article

Times cited : (12)

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