High efficiency AlxGa1-xAs/GaAs solar cells: Fabrication, irradiation and annealing effect

Solar Energy Materials and Solar Cells

Volumn 44, Issue 1, 1996, Pages 63-67

  Li, B ^a,c   Xiang, X B ^a   You, Z P ^b   Xu, Y ^a   Fei, X Y ^a   Liao, X B ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SICHUAN UNIVERSITY   (China)

^c SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

Annealing; GaAs; Irradiation; Liquid phase epitaxy; Solar cell

Indexed keywords

ANNEALING; ELECTRON BEAMS; LIQUID PHASE EPITAXY; RADIATION EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS;

ELECTRON IRRADIATION; GALLIUM ARSENIDE SOLAR CELLS; ISOCHRONAL ANNEALING; ISOTHERMAL ANNEALING; SOLAR CELL FABRICATION;

SOLAR CELLS;

EID: 0030261025     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-0248(96)00025-6     Document Type: Article

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