Distribution of Fe in an intrinsic gettered silicon wafer after annealing at supersaturation temperature

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 10 PART A, 1996, Pages

  Aoki, Masaki ^a   Hara, Akito ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Deep level transient spectroscopy; Intrinsic gettering; Iron; Oxygen precipitate; Silicon wafer; Solid solubility

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; IRON; OXYGEN; PRECIPITATION (CHEMICAL); SOLUBILITY; SUPERSATURATION; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

CZOCHRALSKI INTRINSIC GETTERED WAFERS; ENERGY DISPERSIVE X RAY (EDX) ANALYSIS; OXYGEN PRECIPITATE; SOLID SOLUBILITY;

SILICON WAFERS;

EID: 0030260729     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1231     Document Type: Article

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