Emission characteristics of the molybdenum-coated silicon field emitter array

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 10 PART A, 1996, Pages

  Park, Heung Woo ^a   Ju, Byeong Kwon ^a   Lee, Yun Hi ^a   Park, Jung Ho ^b   Oh, Myung Hwan ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

Current fluctuation; Fowler Nordheim; Reactive ion etching; Sharpening; Tip

Indexed keywords

COATED MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; MOLYBDENUM; REACTIVE ION ETCHING;

COLD EMITTERS; CURRENT FLUCTUATIONS; FOWLER-NORDHEIM EQUATION; REOXIDATION SHARPENING; SILICON TIP ARRAYS;

SEMICONDUCTING SILICON;

EID: 0030260603     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1301     Document Type: Article

References (21)

1. H.-C. Lee and R.-S. Huang: Sensors & Actuators A 34 (1992) 137.
2. T. R. Albrecht, S. Akamine, T. E. Carver and C. F. Quate: J. Vac. Sci. & Technol. A 8 (1990) 414.
3. R. Zhang and D. G. Ivey: J. Vac. Sci. & Technol. B 14 (1996) 1.
4. T. W. Kenny et al.: J. Vac. Sci. & Technol. A 11 (1993) 797.
5. N. Kumar, H. Schmimidt and C. Xie: Solid State Technol. (1995) 71.
6. J. C. Jiang and R. C. White: Proc. Int. Conf. Society for Information Display (1993) p. 596.
7. D. W. Branston and D. Stephani: IEEE Trans. Electron Devices 38 (1991) 2329.
8. D. Stephani, J. Eibi, D. W. Branston and W. Bartsch: Microelectron. Eng. 13 (1991) 505.
9. W. B. Choi et al.: Proc. Int. Vacuum Microelectronics Conf. (1995) p. 315.
10. E. I. Givargizov: Proc. Int. Vacuum Microelectronics Conf. (1995) 414.
11. R. A. King, R. A. D. Mackenzie, G. D. W. Smith and N. A. Cade: Proc. Int. Vacuum Microelectron. Conf. (1995) 603.
12. J. L. Shaw, D. Temple and H. F. Gray: Le Vide les Couches Minces (1994) 357.
13. Tianbao Xie, W. A. Mackie and P. R. Davis: Proc. Int. Vacuum Microelectronics Conf. (1995) 403.
14. A. A. Evtukh et al.: Proc. Int. Vacuum Microelectronics Conf. (1995) 529.
15. F. Y. Chuang, C. Y. Sun, H. F. Cheng, C. M. Huang and I. N. Lin: Appl. Phys. Lett. 68 (1996) 1666.
16. D. Donoval, C. M. Snowden, V. Nagl, J. Racko and M. Barus: IEEE Trans. Electron Devices 42 (1995) 1187.
17. R. Jonckheere, K. Ronse, O. Popa and L. V. den Hove: J. Vac. Sci. & Technol. B 12 (1994) 3765.
18. R. Ditchfield, M. A. Mendicino and E. G. Seebauer: J. Electrochem. Soc. 143 (1996) 266.
19. S. C. Deevi: Int. J. Met. & Hard Mater. 13 (1995) 337.
20. S. M. Cardonne, P. Kumar, C. A. Mickaluk and H. D. Schwartz: Int. J. Met. & Hard Mater. 13 (1995) 187.
21. C. A. Spindt et al.: J. Appl. Phys. 47 (1976) 5248.