Realization of silicon quantum wires by selective chemical etching and thermal oxidation

Applied Physics A: Materials Science and Processing

Volumn 63, Issue 4, 1996, Pages 371-375

  Liu, J L ^a   Shi, Y ^a   Wang, F ^a   Lu, Y ^a   Zhang, R ^a   Gu, S L ^a   Han, P ^a   Hu, L Q ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

LITHOGRAPHY; MICROELECTRONIC PROCESSING; OXIDATION; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SILICON WAFERS; SUBSTRATES;

SELECTIVE CHEMICAL ETCHING; SILICON QUANTUM WIRES; THERMAL OXIDATION;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0030260172     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF01567328     Document Type: Article

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