Study of initial stage of molecular adsorption on Si(100) by scanning tunneling microscopy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 10 SUPPL. B, 1996, Pages

  Nakajima, Ken ^a,c   Hashizume, Tomihiro ^b   Heike, Seiji ^b   Watanabe, Satoshi ^b   Mitsuya, Munehisa ^b   Ikehara, Takayuki ^a   Wada, Yasuo ^b   Nishi, Toshio ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b HITACHI LTD   (Japan)

^c Promotion of Science

Author keywords

Conjugated aromatic compound; Initial stage of adsorption; Scanning tunneling microscopy; Si(100)

Indexed keywords

AROMATIC COMPOUNDS; ELECTRON ENERGY LEVELS; MOLECULES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACES;

CONJUGATED AROMATIC COMPOUND; DIMERS; MOLECULAR ADSORPTION;

ADSORPTION;

EID: 0030260001     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1360     Document Type: Article

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