Effects of process parameters on titanium dioxide thin film deposited using ECR MOCVD

Thin Solid Films

Volumn 287, Issue 1-2, 1996, Pages 120-124

  Lee, Joon Sung ^a   Song, Han Wook ^a   Lee, Won Jong ^a   Yu, Byoung Gon ^b   No, Kwangsoo ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Chemical vapour deposition; Oxides; Plasma processing and deposition

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; ELLIPSOMETRY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA APPLICATIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION;

TITANIUM DIOXIDE;

EID: 0030259823     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08784-6     Document Type: Article

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