Optically detected spin resonance of conduction band electrons in InGaAs/InP quantum wells

Semiconductor Science and Technology

Volumn 11, Issue 10, 1996, Pages 1416-1423

  Kowalski, B ^a   Omling, P ^a   Meyer, B K ^b   Hofmann, D M ^b   Harle V ^c   Scholz, F ^c   Sobkowicz, P ^d  

^a LUND UNIVERSITY   (Sweden)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c UNIVERSITY OF STUTTGART   (Germany)

^d INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; ELECTRIC FIELD EFFECTS; MAGNETIC ANISOTROPY; MATHEMATICAL MODELS; PARAMAGNETIC RESONANCE; SEMICONDUCTING INDIUM COMPOUNDS;

CONDUCTION BAND; ELECTRIC DIPOLE TRANSITIONS; KANE MODEL; MAGNETIC DIPOLE TRANSITIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030259572     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/10/011     Document Type: Article

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