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Volumn 143, Issue 5, 1996, Pages 289-294

Mask-programmable multiple-valued logic gate using resonant tunnelling diodes

Author keywords

Implementation; Logic gate; Resonant tunnelling diodes

Indexed keywords

ALGORITHMS; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; LOGIC GATES; QUANTUM ELECTRONICS; TUNNEL DIODES;

EID: 0030259489     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:19960571     Document Type: Article
Times cited : (10)

References (16)
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  • 3
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    • L., MUNNS, G., EAST, J.RHADDAD, G.I.InGaAs/AlAs/InGaAsP resonant tunnelling hot electron transistors crown by chemical beam epitaxy', IEEE Trans
    • CHEN, W.L., MUNNS, G., EAST, J.R., and HADDAD, G.I.: 'InGaAs/AlAs/InGaAsP resonant tunnelling hot electron transistors crown by chemical beam epitaxy', IEEE Trans. Electron Devices, 1994, 41, (2), pp. 155-161
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  • 8
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    • MOHAN, S., MAZUMDER, PHADDAD, G.I.Multivalued multiplexer design using resonant tunnelling devices and heterojunction bipolar transistors', IEEE J
    • CHAN, E., MOHAN, S., MAZUMDER, P., and HADDAD, G.I.: 'Multivalued multiplexer design using resonant tunnelling devices and heterojunction bipolar transistors', IEEE J. SolidState Circuits, 1996,31, pp. 1151-1156
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.