Characteristics of lateral pn junctions grown on (100) GaAs patterned substrate

Journal of Materials Science: Materials in Electronics

Volumn 7, Issue 5, 1996, Pages 315-319

  Gardner, N R ^a   Woods, N J ^a   Dominguez, P S ^b   Norman, C E ^b   Harris, J J ^b  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SILICON; SUBSTRATES;

CAPACITANCE-VOLTAGE PROFILING; CURRENT-VOLTAGE PROFILING; DOPING PROFILES; FACET-FLAT BOUNDARY; JUNCTION LOCATION; SILICON DOPED GALLIUM ARSENIDE;

SEMICONDUCTOR JUNCTIONS;

EID: 0030259464     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00185924     Document Type: Article

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