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Applied Physics Letters

Volumn 69, Issue 18, 1996, Pages 2689-2691

Photon-assisted tunneling in GaAs/AlGaAs superlattices up to room temperature

(4) Zeuner, S a Allen, S J a Maranowski, K D b Gossard, A C b

a UNIVERSITY OF CALIFORNIA (United States)

b University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON ENERGY LEVELS; GAIN MEASUREMENT; NATURAL FREQUENCIES; PHOTONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

ALUMINUM GALLIUM ARSENIDE; EXCITED STATES; GROUND STATES; PHOTON ASSISTED TUNNELING; TERAHERTZ RADIATION;

ELECTRON TUNNELING;

EID: 0030259392 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.117679 Document Type: Article

Times cited : (21)

References (10)

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- note
- bias is divided by ηN, where η=1.4, and N=10 is the number of periods in the superlattice.

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