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Thin Solid Films

Volumn 287, Issue 1-2, 1996, Pages 74-79

Characterization of RuO2 thin films deposited on Si by metal-organic chemical vapor deposition

(5) Liao, P C a Mar, S Y a Ho, W S a Huang, Y S a Tiong, K K b

a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

b NATIONAL TAIWAN OCEAN UNIVERSITY (Taiwan)

Author keywords

Auger electron spectroscopy; Electrical properties and measurements; Organometallic vapour deposition; Raman scattering

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRIC CONDUCTIVITY MEASUREMENT; ELLIPSOMETRY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; RUTHENIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SPECTROPHOTOMETRY; SUBSTRATES; SURFACE STRUCTURE; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

RUTHENIUM DIOXIDE THIN FILMS;

SEMICONDUCTING FILMS;

EID: 0030259191 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(96)08761-5 Document Type: Article

Times cited : (21)

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