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Volumn 414, Issue 2, 1996, Pages 135-139
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Electrochemical anion doping of poly[(tetraethyldisilanylene) oligo(2,5-thienylene)] derivatives and their p-type semiconducting properties
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Author keywords
Anion doping; Electrochemistry; p type semiconductors; Poly (tetraethyldisilanylene)oligo(2,5 thienylene) derivatives
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Indexed keywords
BAND STRUCTURE;
CHEMICAL BONDS;
COMPOSITION;
CYCLIC VOLTAMMETRY;
DERIVATIVES;
DOPING (ADDITIVES);
ELECTRIC CONDUCTIVITY;
ELECTRIC PROPERTIES;
ELECTROCHEMISTRY;
ENERGY GAP;
OXIDATION;
SYNTHESIS (CHEMICAL);
ANODIC PEAK POTENTIAL;
BAND GAP ENERGIES;
ELECTROCHEMICAL ANION DOPING;
ORGANOSILICON POLYMERS;
POLYTETRAETHYLDISILANYLENE OLIGOTHIENYLENE DERIVATIVES;
SEMICONDUCTING POLYMERS;
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EID: 0030258064
PISSN: 15726657
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0728(96)04670-0 Document Type: Article |
Times cited : (23)
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References (21)
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