p-i Interface engineering and i-layer control of hot-wire a-Si:H based p-i-n solar cells using in-situ ellipsometry

Solar Energy Materials and Solar Cells

Volumn 43, Issue 4, 1996, Pages 413-424

  Bauer, S ^a   Dusane, R O ^a,b   Herbst, W ^a   Diehl, F ^a   Schroder B ^a   Oechsner, H ^a  

^a University of Koblenz Landau   (Germany)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Amorphous silicon; Conversion efficiency; Ellipsometry; I V characteristics; Interfaces

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; CORRELATION METHODS; CURRENT VOLTAGE CHARACTERISTICS; DETERIORATION; ELLIPSOMETRY; MICROSTRUCTURE; SPECTROSCOPIC ANALYSIS; SURFACE ROUGHNESS; TEMPERATURE CONTROL;

HOT WIRE DEPOSITED HYDROGENATED AMORPHOUS SILICON SOLAR CELLS; SILICON SILICON BOND PACKING DENSITY;

SILICON SOLAR CELLS;

EID: 0030257601     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-0248(96)00055-4     Document Type: Article

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