Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering

Journal of Materials Research

Volumn 11, Issue 10, 1996, Pages 2458-2462

  Hultman, L ^a   Ljungcrantz, H ^a   Hallin, C ^a   Janzen E ^a   Sundgren, J E ^a   Pecz B ^b   Wallenberg, L R ^c  

^a LINKÖPING UNIVERSITY   (Sweden)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^c LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; FILM GROWTH; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; NUCLEATION; SILICON CARBIDE; STACKING FAULTS; SUBSTRATES; THIN FILMS;

ULTRAHIGH VACUUM REACTIVE MAGNETRON SPUTTERING;

TITANIUM NITRIDE;

EID: 0030257396     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1996.0309     Document Type: Article

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