Quantification by optical absorption of the coarse modulation observed by transmission electron microscopy in InGaAs layers grown on InP(100)

Semiconductor Science and Technology

Volumn 11, Issue 9, 1996, Pages 1310-1316

  Roura, P ^a   Bosch, J ^b   Clark, S A ^b   Peiro F ^b   Cornet, A ^b   Morante, J R ^b   Williams, R H ^c  

^a UNIVERSITY OF GIRONA   (Spain)

^b UNIVERSITY OF BARCELONA   (Spain)

^c CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; COMPOSITION; CRYSTAL STRUCTURE; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

COARSE MODULATION; COARSE QUASI PERIODIC CONTRAST; COARSE STRUCTURE; ENERGY DISPERSION; INHOMOGENEITIES; OPTICAL ABSORPTION SPECTRA;

HETEROJUNCTIONS;

EID: 0030247609     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/9/011     Document Type: Article

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