The interface between sputter-deposited gold thin films and ion-bombarded sapphire substrates

Applied Surface Science

Volumn 103, Issue 1, 1996, Pages 39-48

  Park, J W ^a   Pedraza, A J ^a   Allen, W R ^b  

^a University of Tennessee Knoxville   (United States)

^b Lockheed Martin Energy Systems Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; ALUMINA; ANNEALING; BINDING ENERGY; ETCHING; GOLD; INTERFACES (MATERIALS); ION BOMBARDMENT; SAPPHIRE; SPUTTER DEPOSITION; SUBSTRATES; SURFACE STRUCTURE;

ANNEALED SAPPHIRE; AUGER ELECTRON ESCAPE DEPTH; GOLD THIN FILMS; HIGHER ENERGY AUGER PEAKS; PRESPUTTERED SAPPHIRE; SAPPHIRE SUBSTRATES; SPUTTER ETCHED CRATER;

SURFACE TREATMENT;

EID: 0030247365     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00097-9     Document Type: Article

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