SCOPUS 정보 검색 플랫폼

Nanostructured Materials

Volumn 7, Issue 7, 1996, Pages 741-748

Size dependence of electrical resistivity in 1D-layered nanostructures

(2) Qin, R S a Zhou, B L a,b

a INSTITUTE OF METAL RESEARCH (China)

b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); MATHEMATICAL MODELS; POLYCRYSTALS;

INTERFACE BARRIER HEIGHT; INTERFACE VOLUME; LANDAUER ELECTRICAL RESISTIVITY; RESISTANCE LOGARITHM ANALYSIS;

NANOSTRUCTURED MATERIALS;

EID: 0030247245 PISSN: 09659773 EISSN: None Source Type: Journal
DOI: 10.1016/S0965-9773(96)00047-5 Document Type: Article

Times cited : (11)

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