Growth mode of Au layer on Si(001)

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 117, Issue 3, 1996, Pages 289-294

  Kim, K S ^a   Kim, Y W ^a   Park, N G ^a   Cho, W S ^a   Choi, D S ^a,b   Kim, S S ^a,c   Whang, C N ^a  

^a Yonsei University   (South Korea)

^b Kangwon National University   (South Korea)

^c Mokwon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; CRYSTAL ORIENTATION; FILM GROWTH; SCANNING ELECTRON MICROSCOPY; SILICON; SPECTROSCOPY; THIN FILMS; THREE DIMENSIONAL;

ANNEALING EFFECT; COAXIAL IMPACT COLLISION ION SCATTERING SPECTROSCOPY; GROWTH MODE;

GOLD;

EID: 0030247061     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(96)00292-3     Document Type: Article

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