The rectification studies on the P+-ion implanted C60/Si films

Fullerene Science and Technology

Volumn 4, Issue 5, 1996, Pages 963-975

  Shi, Y ^a   Xiong, C M ^a   He, Y X ^b   Guo, H X ^a   Fan, X J ^a  

^a WUHAN UNIVERSITY   (China)

^b WUHAN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; FILMS; HETEROJUNCTIONS; ION IMPLANTATION; PHOSPHORUS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS;

CARBON ARC METHOD; CURRENT VOLTAGE MEASUREMENT; RECTIFICATION; SEMICONDUCTOR HETEROJUNCTIONS;

FULLERENES;

EID: 0030246591     PISSN: 1064122X     EISSN: None     Source Type: Journal    
DOI: 10.1080/10641229608001155     Document Type: Article

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