Transverse modes and lasing characteristics of selectively grown vertical cavity semiconductor lasers

Applied Physics Letters

Volumn 69, Issue 13, 1996, Pages 1840-1842

  Orenstein, M ^a   Satuby, Y ^a   Ben Ami, U ^b   Harbison, J P ^c  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^c TELCORDIA TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONTACTS; ELECTRIC VARIABLES MEASUREMENT; LASER MODES; LIGHT POLARIZATION; MASKS; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SILICON NITRIDE; SURFACE STRUCTURE;

SELECTIVE GROWTH METHOD; TRANSVERSE MODES; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030246498     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117451     Document Type: Article

References (9)

1. M. R. T. Tan, Y. M. Houng, K. H. Hahn, A. G. Weber, S. Y. Wang, and K. W. Carey, LEOS, San Francisco, CA, 1996, Paper SCL2.3.
2. J. L. Jewell, A. Scherer, S. L. McCall, S. Walker, Y. H. Lee, J. P. Harbison, and L. T. Florez, Electron. Lett. 8, 205 (1989).
3. A. Scherer, J. L. Jewell, Y. H. Lee, J. P. Harbison, and L. T. Florez, Appl. Phys. Lett. 55, 2724 (1989).
4. R. S. Geels and L. A. Coldren, Appl. Phys. Lett. 57, 1605 (1990).
5. M. Orenstein, N. G. Stoffel, A. C. Von Lehmen, J. P. Harbison, and L. T. Florez, Appl. Phys. Lett. 59, 31 (1991).
6. M. Orenstein, A. C. Von Lehmen. C. Chang-Hasnain, N. G. Stoffel, L. T. Florez, J. P. Harbison, and E. Clausen, Appl. Phys. Lett. 56, 2384 (1990).
7. D. L. Huffaker, D. G. Deppe, and K. Kumar, Appl. Phys. Lett. 65, 97 (1994).
8. R. Bhat, Semicond. Sci. Technol. 8, 984 (1993), and references therein.
9. O. Kayser, J. Cryst, Growth 107, 989 (1991), and references therein.