SCOPUS 정보 검색 플랫폼

Volumn 143, Issue 9, 1996, Pages 2953-2957

Oxide growth effects in micron and submicron field regions: A comparison between wet and dry oxidation

a ITC IRST (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

MASKS; OXIDATION; OXIDES; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; SILICON WAFERS; STRESSES; THICKNESS MEASUREMENT; VISCOSITY;

COMPRESSIVE STRESS; FIELD OXIDE THINNING; LOCAL OXIDATION OF SILICON; SILICON OXIDE;

FILM GROWTH;

EID: 0030245977 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1837132 Document Type: Review

Times cited : (2)

References (14)

1
- 0015770791
- H. R. Huff and R. R. Burgess, Editors, The Electrochemical Society Proceedings Series, Princeton, NJ
- E. Kooi and J. A. Appels, in Semiconductor Silicon 1973, H. R. Huff and R. R. Burgess, Editors, p. 860, The Electrochemical Society Proceedings Series, Princeton, NJ (1973).
- (1973) Semiconductor Silicon 1973 , pp. 860
- Kooi, E.¹ Appels, J.A.²

2
- 0348191775
- T. Mizuno, S. Sawada, S. Maeda, and S. Shinozaki, IEEE Trans. Electron Devices, ED-34, 2255 (1987)
- (1987) IEEE Trans. Electron Devices , vol.ED-34 , pp. 2255
- Mizuno, T.¹ Sawada, S.² Maeda, S.³ Shinozaki, S.⁴

3
- 0025448882
- J. W. Lutze, A. H. Perera, and J. Krusius, This Journal, 137, 1867 (1990).
- (1990) This Journal , vol.137 , pp. 1867
- Lutze, J.W.¹ Perera, A.H.² Krusius, J.³

4
- 0027678051
- S. Deleonibus, F. Martin, J. du Port de Pontcharra, and S. Tedesco, ibid., 140, 2908 (1993).
- (1993) This Journal , vol.140 , pp. 2908
- Deleonibus, S.¹ Martin, F.² Du Port De Pontcharra, J.³ Tedesco, S.⁴

5
- 0023344918
- D. Kao, J. P. Mc Vittie, W. D. Nix, and K. C. Saraswat, IEEE Trans. Electron Devices, ED-34, 1008 (1987).
- (1987) IEEE Trans. Electron Devices , vol.ED-34 , pp. 1008
- Kao, D.¹ Mc Vittie, J.P.² Nix, W.D.³ Saraswat, K.C.⁴

6
- 0023855615
- D. Kao, J. P. Mc Vittie, W. D. Nix, and K. C. Saraswat, ibid., ED-35, 25 (1988).
- (1988) IEEE Trans. Electron Devices , vol.ED-35 , pp. 25
- Kao, D.¹ Mc Vittie, J.P.² Nix, W.D.³ Saraswat, K.C.⁴

7
- 0029483598
- P. Bellutti, M. Boscardin, G. Soncini, M. Zen, and N. Zorzi, Semicond. Sci. Technol., 10, 1700 (1995).
- (1995) Semicond. Sci. Technol. , vol.10 , pp. 1700
- Bellutti, P.¹ Boscardin, M.² Soncini, G.³ Zen, M.⁴ Zorzi, N.⁵

8
- 5844310190
- H. Massoud, E. Poindexter, and C. Helms, Editors, PV 96-1, The Electrochemical Society Proceedings Series, Pennington, NJ
- 2 Interface - 3, H. Massoud, E. Poindexter, and C. Helms, Editors, PV 96-1, p. 635, The Electrochemical Society Proceedings Series, Pennington, NJ (1996).
- (1996) 2 Interface - 3 , pp. 635
- Bellutti, P.¹ Boscardin, M.² Zen, M.³ Zorzi, N.⁴

9
- 0001391263
- H. Matsumoto and M. Fukuma, IEEE Trans. Electron Devices, ED-32, 132, (1985).
- (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 132
- Matsumoto, H.¹ Fukuma, M.²

10
- 5844245782
- U.S. Pat. 4,541,167 (1985)
- R. Haveman and G. Pollack, U.S. Pat. 4,541,167 (1985).
- Haveman, R.¹ Pollack, G.²

11
- 84975449235
- E. Kooi, J. G. van Lierop, and J. A. Appels, This Journal, 123, 1117 (1976).
- (1976) This Journal , vol.123 , pp. 1117
- Kooi, E.¹ Van Lierop, J.G.² Appels, J.A.³

12
- 0028385506
- P. Bellutti and A. Lui, ibid., 141, 750 (1994).
- (1994) This Journal , vol.141 , pp. 750
- Bellutti, P.¹ Lui, A.²

13
- 0020748956
- M. Itsumi, O. Nakajima, and K. Minegishi, ibid., 130, 1160 (1983).
- (1983) This Journal , vol.130 , pp. 1160
- Itsumi, M.¹ Nakajima, O.² Minegishi, K.³

14
- 5844380212
- S. S. Kim, A. Emani, and S. Deleonibus, Solid State Technol., 37, 63 (1994).
- (1994) Solid State Technol. , vol.37 , pp. 63
- Kim, S.S.¹ Emani, A.² Deleonibus, S.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.