RF and 1/F noise investigations on MESFETS and circuits transplanted by epitaxial lift off

IEEE Transactions on Electron Devices

Volumn 43, Issue 9, 1996, Pages 1489-1494

  Morf, Thomas ^a,b   Brys, Catherine ^c   Van Daele, Peter ^a,b   Demeester, Piet ^a,c   Benedickter, Hansruedi ^b   Bächtold, Werner ^c  

^a IEEE

^b ETH ZURICH   (Switzerland)

^c University of entimec   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL LIFT OFF (ELO); LOW FREQUENCY NOISE;

EPITAXIAL GROWTH; GATES (TRANSISTOR); LEAKAGE CURRENTS; MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL NOISE MEASUREMENT; SUBSTRATES;

MESFET DEVICES;

EID: 0030244073     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.535339     Document Type: Article

References (7)

1. I. Pollentier, P. Demeestcr, and P. Van Daele, "Epitaxial lift-off: A combination of the advantages of hybrids and monolithic integration," in Proc. EFOC/LAN'92, Paris, 1992.
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4. J. F. Klein, E. D. Jones, D. R. Myers, and J. A. Lott, "Characterization of thin AlGaAs/InGaAs/GaAs quantum-well structures bonded directly to SiU2/Si and glass substrates," J. Appi. Phys., vol. 66, no. 1, July 1989.
5. I. Pollentier, C. Brys, P. Demeester, P. Van Daele, and L. Martens, "Transplantation of epitaxially lifted-off MESFET's fabricated by a commercial foundry: Operation and reliability," Electron. Lett., vol. 29, no. 3, Feb. 4, 1993.
6. T. Morf, C. Brys, I. Pollentier, P. De Dobbelaere, P. van Daele, P. Demeester, and W. Bachtold. "Noise investigations on MESFET's transplanted by epitaxial lift off," in Proc. Euro. Solid State Device Res. Conf. (ESSDERC'95), The Hague, The Netherlands, Sept. 1995, pp. 157-161.
7. T. Morf, C. Brys, I. Pollentier, P. De Dobbelaere, P. van Daele, P. Demeester, M. Renaud, J. L. Peyre, and T. Martinson, "Monolithic optical receivers for high-speed access nodes using epitaxial lift-off," in Proc. ECOC'93, Montreux, Switzerland, Sept. 12-16, 1993.