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note
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In the simulations presented here, a small amount of "transient kinetics" (according to which freshly deposited atoms at a step edge may hop immediately to the nearest fourfold hollow site below) was included. This is equivalent to the "knockout" process at step edges observed in field-ion microscopy of Rh deposited on Ir/Ir(111) clusters [14].
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and references therein
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85136553277
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note
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∥, due to the use of periodic boundary conditions and the epitaxial constraint that the heights of neighboring sites must differ by 1.
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31
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0041508945
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note
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∥.
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