A 64-site multishank CMOS low-profile neural stimulating probe

IEEE Journal of Solid-State Circuits

Volumn 31, Issue 9, 1996, Pages 1230-1238

  Kim, Changhyun ^a,b,c,d,e   Wise, Kensall D ^{a,b,f,g,h,i,j,k,l}  

^a IEEE

^b The Department of Civil and Environmental Engineering   (United States)

^c Seoul National University   (South Korea)

^d UNIVERSITY OF MICHIGAN   (United States)

^e SAMSUNG Electronics   (South Korea)

^f PURDUE UNIVERSITY   (United States)

^g STANFORD UNIVERSITY   (United States)

^h LUCENT TECHNOLOGIES   (United States)

ⁱ Stanford University

^j Dept of Manufacturing Technology ^*

^k Ctr for Intgd Sensors and Circuits   (United States)

^l ELECTROCHEMICAL SOCIETY

more..

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; MICROELECTRODES; NEUROLOGY; PROBES; SILICON SENSORS;

CENTRAL NERVOUS SYSTEM (CNS); CORTEX; NEURAL TISSUE; ON CHIP PREAMPLIFIER;

FUNCTIONAL NEURAL STIMULATION;

EID: 0030243818     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.535406     Document Type: Article

References (13)

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