Microwave properties and strain-induced lattice defects of c-axis-oriented YBa2Cu3O7-δ thin films on silicon

Journal of Applied Physics

Volumn 80, Issue 6, 1996, Pages 3488-3492

  Jaekel, C ^a   Kyas, G ^a   Roskos, H G ^a   Kurz, H ^a   Kabius, B ^b   Meertens, D ^b   Prusseit, W ^c   Utz, B ^c  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRIC RESISTANCE; GRAIN BOUNDARIES; LOW TEMPERATURE EFFECTS; MATHEMATICAL MODELS; MICROWAVES; SILICON; TRANSMISSION ELECTRON MICROSCOPY; YTTRIUM COMPOUNDS;

ANTIPHASE BOUNDARIES; FILM THICKNESS; STRUCTURAL MODIFICATION; YTTRIUM BARIUM CUPRATE;

SUPERCONDUCTING FILMS;

EID: 0030243766     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363220     Document Type: Article

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