A nondestructive method for measuring the photoelectric parameters of wafers with P-N junctions

Solid-State Electronics

Volumn 39, Issue 9, 1996, Pages 1379-1383

  Koshelev, O G ^a   Morozova, V A ^a  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; DIFFUSION; LIGHT ABSORPTION; LIGHT MODULATION; NONDESTRUCTIVE EXAMINATION; PHASE SHIFT; PHOTOELECTRICITY; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS;

DIFFUSION LENGTH; INTENSITY RATIO; MINORITY CARRIER LIFETIME; PHOTOVOLTAGE; PHOTOVOLTAIC COMPENSATION;

SILICON WAFERS;

EID: 0030243577     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00040-8     Document Type: Review

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