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Volumn 39, Issue 9, 1996, Pages 1396-1397

A novel UMOS capacitor test structure for SiC devices

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CAPACITANCE; CAPACITORS; ELECTRIC CONTACTS; GATES (TRANSISTOR); OXIDES; REACTIVE ION ETCHING; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SILICON NITRIDE;

EID: 0030243565     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)80001-Z     Document Type: Article
Times cited : (3)

References (6)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.