|
Volumn 39, Issue 9, 1996, Pages 1396-1397
|
A novel UMOS capacitor test structure for SiC devices
|
Author keywords
[No Author keywords available]
|
Indexed keywords
BIPOLAR TRANSISTORS;
CAPACITANCE;
CAPACITORS;
ELECTRIC CONTACTS;
GATES (TRANSISTOR);
OXIDES;
REACTIVE ION ETCHING;
SEMICONDUCTING FILMS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE STRUCTURES;
SILICON CARBIDE;
SILICON NITRIDE;
CAPACITANCE VOLTAGE CHARACTERISTICS;
INSULATED GATE BIPOLAR TRANSISTORS;
MASK LAYERS;
OXIDE THICKNESS;
THERMAL GATE OXIDES;
U GROOVED MOS CAPACITORS;
MOSFET DEVICES;
|
EID: 0030243565
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/0038-1101(96)80001-Z Document Type: Article |
Times cited : (3)
|
References (6)
|