Monolithic AGC loop for a 160 Mb/s transimpedance amplifier

IEEE Journal of Solid-State Circuits

Volumn 31, Issue 9, 1996, Pages 1331-1335

  Meyer, Robert G ^a   Mack, William D ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BIPOLAR INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; DETECTOR CIRCUITS; ELECTRIC NETWORK TOPOLOGY; GAIN CONTROL; INTEGRATED CIRCUIT LAYOUT;

FORWARD GAIN PATH; INPUT CURRENT HANDLING CAPABILITY; INPUT NOISE CURRENT SPECTRAL DENSITY; MONOLITHIC AUTOMATIC GAIN CONTROL (AGC) AMPLIFIER; ON CHIP PEAK DETECTOR; TRANSIMPEDANCE;

HIGH FREQUENCY AMPLIFIERS;

EID: 0030242654     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.535419     Document Type: Article

References (5)

1. R. G. Meyer and W. D. Mack, "A wideband low-noise variable-gain BiCMOS transimpedance amplifier," IEEE J. Solid-State Circuits, vol. 29, pp. 701-706, June 1994.
2. W. Scheinberg, R. G. Bayruns, and T. M. Laverick, "Monolithic GaAs transimpedance amplifiers for fiber-optic receivers," IEEE J. Solid-State Circuits, vol. 26, no. 12, pp. 1834-1839, Dec. 1991.
3. S. S. Taylor and T. P. Thomas, "A 2 pA/√/Hz-622 Mb/S GaAs MESFET transimpedance amplifier," in ISSCC Dig. Tech. Papers, Feb. 1994, pp. 254-255.
4. Y. Tsividis, Operation and Modeling of the MOS Transistor. New York: McGraw-Hill, 1987, p. 137.
5. R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 2nd ed. New York: Wiley, 1986, p. 335.