Methodology of abrupt heterostructures: Band diagram calculations

Solid-State Electronics

Volumn 39, Issue 9, 1996, Pages 1385-1390

  Djaloshinski, L ^a   Nemirovsky, Y ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CARRIER CONCENTRATION; FERMI LEVEL; INTERFACES (MATERIALS); TRANSPORT PROPERTIES;

ABRUPT HETEROSTRUCTURES; BAND DISCONTINUITIES; CHARGE NEUTRALITY; INTERFACE CHARGE DENSITY; POISSON EQUATION; VALENCE BAND;

HETEROJUNCTIONS;

EID: 0030242418     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00020-2     Document Type: Review

References (8)

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