The double-sided floating-surface detector: An enhanced charge-detection architecture for CCD image sensors

IEEE Transactions on Electron Devices

Volumn 43, Issue 9, 1996, Pages 1583-1591

  Roks, Edwin ^a   Centen, Peter G M ^a   Hosiers, Jan T ^a   Huinink, Wim F ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CHARGE COUPLED DEVICES; ELECTRONS; MOS DEVICES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL NOISE;

CHARGE PACKETS; DOUBLE SIDED FLOATING SURFACE DETECTOR (DSFSD); NOISE ELECTRONS;

IMAGE SENSORS;

EID: 0030242364     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.535352     Document Type: Article

References (7)

1. J. T. Bosiers, H. L. Peek, A. C. Kleimann, N. J. Daemen, E. Roks, A. G. van der Sijde, R. M. Jansen, and P. Opmcer, "A S-VHS compatible 1β" 720(H)588(V) FI' CCD with low dark current by surface pinning," 1EDM Tech. Dig., pp. 97-100, 1992.
2. [2| P. Centen, "CCD on-chip amplifiers: Noise performance versus MOS transistor dimensions," IEEE Trans. Electron Devices, vol. 38, no. 5, pp. 1206-1216, May 1991.
3. [3| R. J. Brewer, "The low light level potential of a CCD imaging array," IEEE Trans. Electron Devices, vol. ED-27, no. 2, Feb. 1980.
4. [4| Y. Matsunaga, S. Oosawa, M. lesaka, S. Manabe. N. Harada, and N. Suzuki, "A high sensitivity output amplifier for CCD image sensor," IEDM Tech. Dig., pp. 116-119, 1987.
5. E. Roks, P. G. Centen, L. Sankaranarayanan, J. T. Bosiers, and W. F. Hninink, "A bipolar floating-base detector (FED) for CCD image sensors," IEDM Tech. Dig., pp. 109-112, 1992.
6. J. G. C. Bakker, "Simple analytical expressions for the fringing field and fringing field induced transfer time in charge-coupled devices," IEEE Trans. Electron Devices, vol. ED-38, no. 5, pp. 1152-1161, May 1991.
7. H. C. de Graaff and F. M. Klaassen, Compact Transistor Modeling for Circuit Design Wien: Springer-Verlag, 1989. pp. 243-244.