On the high pressure structural phase transition and the chemical bonding in III-V compounds

Solid State Communications

Volumn 99, Issue 9, 1996, Pages 659-664

  Zaoui, A ^a   Certier, M ^a   Ferhat, M ^b   Khelifa, B ^b  

^a UNIVERSITÉ DE LORRAINE   (France)

^b UNIVERSITY OF ORAN   (Algeria)

Author keywords

A. Semiconductors; D. Phase transitions

Indexed keywords

CHEMICAL BONDS; HYDROSTATIC PRESSURE; PHASE TRANSITIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

HIGH PRESSURE; IONICITY FACTOR; STRUCTURAL PHASE TRANSITION;

SEMICONDUCTOR MATERIALS;

EID: 0030241698     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00116-0     Document Type: Article

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