A study of band-bending and barrier height variation in thin film n-CdSe0.5Te0.5 photoanode/polysulphide junctions

Solid State Communications

Volumn 99, Issue 10, 1996, Pages 723-728

  Damodara Das, V ^a   Damodare, Laxmikant ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

A. semiconductors; A. thin films; C. scanning and transmission electron microscopy

Indexed keywords

ANODES; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; DIODES; ELECTRON MICROSCOPY; PH EFFECTS; POLYCRYSTALLINE MATERIALS; POLYELECTROLYTES; POLYSULFIDES; SEMICONDUCTING CADMIUM COMPOUNDS; THERMAL EFFECTS; THIN FILMS;

INDIUM OXIDE COATED GLASS PLATES; MOTT SCHOTTKY PLATE; REVERSE SATURATION CURRENT;

SEMICONDUCTOR JUNCTIONS;

EID: 0030241618     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00195-0     Document Type: Article

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