A 1.2-GS/s 8-b silicon bipolar track&hold IC

IEEE Journal of Solid-State Circuits

Volumn 31, Issue 9, 1996, Pages 1336-1339

  Prégardier, Bernd ^a   Langmann, Ulrich ^a   Hillery, William J ^b  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG TO DIGITAL CONVERSION; BIPOLAR TRANSISTORS; ELECTRIC DISTORTION; INTEGRATED CIRCUIT LAYOUT; NYQUIST DIAGRAMS; SEMICONDUCTING SILICON; SWITCHING CIRCUITS;

NYQUIST BAND; SWITCHED EMITTER FOLLOWER DESIGN; TOTAL HARMONIC DISTORTION; TRACK AND HOLD INTEGRATED CIRCUIT;

BIPOLAR INTEGRATED CIRCUITS;

EID: 0030241327     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.535420     Document Type: Article

References (6)

1. J. Sauerer et al., "System architecture and key components for an 8 bit/1 GHz GaAs MESFET ADC," in IEEE GaAs IC Symp. 1992, Tech. Dig., pp. 105-108.
2. P. Vorenkamp and P. M. Verdaasdonk, "Fully bipolar, 120-Msample/s 10-b track-and-hold circuit," IEEE J. Solid-State Circuits, vol. 27, pp. 988-992, July 1992.
3. R. A. Blauschild, "An 8 b 50 ns monolithic A/D converter with internal S/H," in 1983 IEEE Int. Solid-State Circuits Conf., Dig. Tech. Pap., 1983, pp. 178-179.
4. M. Möller, H.-M. Rein, and H. Wernz, "13 Gb/s Si-bipolar AGC amplifier with high gain and wide dynamic range for optical-fiber receivers," IEEE J. Solid-State Circuits, vol. 29, pp. 815-822, July 1994.
5. W. M. Huang et al., "A high-speed bipolar technology featuring self aligned single-poly base and submicrometer emitter contacts," IEEE Electron Device Lett., vol. 11, no. 9, pp. 412-414, 1990.
6. B. Prégardier, U. Langmann, and W. J. Hillery, "A 1 Gsample/s 8 b silicon bipolar track&hold IC," in IEEE Int. Solid-State Circuits Conf. 1995, Dig. Tech. Papers, pp. 58-59.