Atomistic study of the formation process of Ni silicide on the Si(111)-7 × 7 surface with scanning tunneling microscopy

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 213-217

  Yao, Takafumi ^a,b   Shinabe, Shinji ^c   Yoshimura, Masamichi ^d  

^a TOHOKU UNIVERSITY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

^c HIROSHIMA UNIVERSITY   (Japan)

^d TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; NICKEL COMPOUNDS; SCANNING TUNNELING MICROSCOPY; SILICATES; SURFACE STRUCTURE; THERMAL EFFECTS;

SILICIDES;

SEMICONDUCTING SILICON;

EID: 0030235748     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00146-8     Document Type: Article

References (12)

1. R.E. Schlier and H.E. Farnsworth, J. Chem. Phys. 30 (1959) 917.
2. R.J. Wilson and S. Chiang, Phys. Rev. Lett. 58 (1987) 2575.
3. T. Ichinokawa, T. Tani and A. Sayama, Surf. Sci. 219 (1989) 395.
4. P.A. Bennett, A.P. Johnson and B.N. Halawith, Phys. Rev. B 37 (1988) 4268.
5. A.E. Dolbak, B.Z. Olshanetsky, S.I. Stenin and S.A. Teys, Surf. Sci. 247 (1991) 32.
6. St. Tosch and H. Neddermeyer, Surf. Sci. 211/212 (1989) 133.
7. St. Tosch and H. Neddermeyer, Phys. Rev. Lett. 61 (1988) 349.
8. Ph. Avouris and R. Wolkow, Phys. Rev. B 39 (1989) 5091.
9. K. Takaoka, M. Yoshimura, T. Yao, T. Sato, T. Sueyoshi and M. Iwatsuki, Phys. Rev. B 48 (1993) 5657.
10. R.S. Becker, J.A. Golovchenko, G.S. Higashi and B.S. Swartzentruber, Phys, Rev. Lett. 57 (1986) 1020.
11. M. Tomitori, F. Iwawaki, N. Hirano, F. Katsuki and O. Nishikawa, J. Vac. Sci. Technol. A 8 (1990) 222.
12. S.C. Wu, Z.Q. Wang, Y.S. Li, F. Jona and P.M. Marcus, Phys. Rev. B 33 (1986) 2900.