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Volumn 286, Issue 1-2, 1996, Pages 107-110
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Characterization of GaAs buffer layer function in GaAs/InP strained structure grown by MBE
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Author keywords
Gallium arsenide; Indium phosphide; Molecular beam epitaxy (MBE); X ray diffraction
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Indexed keywords
CRYSTAL LATTICES;
DISLOCATIONS (CRYSTALS);
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
X RAY DIFFRACTION ANALYSIS;
GROWN EPITAXIAL LAYERS;
LATTICE MISMATCH;
STRAINED BUFFER LAYER;
STRAINED STRUCTURE;
MOLECULAR BEAM EPITAXY;
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EID: 0030235510
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(95)08509-2 Document Type: Article |
Times cited : (2)
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References (16)
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