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Volumn 286, Issue 1-2, 1996, Pages 107-110

Characterization of GaAs buffer layer function in GaAs/InP strained structure grown by MBE

Author keywords

Gallium arsenide; Indium phosphide; Molecular beam epitaxy (MBE); X ray diffraction

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; X RAY DIFFRACTION ANALYSIS;

EID: 0030235510     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(95)08509-2     Document Type: Article
Times cited : (2)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.