Influence of buffer layer insertion and annealing mode upon microstructures and ferroelectric characteristics of sol-gel-derived Pb(Zrx, Ti1-x)O3 thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 9 SUPPL. B, 1996, Pages 4941-4945

  Doi, Hidekazu ^a   Tiba, Yoshikazu ^a   Hirayama, Akio ^a   Ryu, Takahiro ^a   Matsushima, Teruji ^a   Hashimoto, Mineo ^a   Kudo, Daishi ^a   Saito, Jyun ^a   Watanabe, Toshio ^a  

^a KANAGAWA UNIVERSITY   (Japan)

Author keywords

Buffer layer; Fatigue; Nonvolatile memory; P E hysteresis loop; PZT; Remanent polarization; Sol gel

Indexed keywords

HYSTERESIS LOOP; NONVOLATILE MEMORY; REMANENT POLARIZATION;

ANNEALING; EXPERIMENTS; FERROELECTRICITY; HYSTERESIS; MICROSTRUCTURE; SOL-GELS;

THIN FILMS;

EID: 0030235415     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4941     Document Type: Article

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