MOCVD growth of Ga 2 Se 3 on GaAs(100) and GaP(100) : A Raman study

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 575-579

  Von Der Emde, M ^a   Zahn, D R T ^a   Ng, T ^c   Maung, N ^b   Fan, G H ^b   Poole, I B ^b   Williams, J O ^b   Wright, A C ^b  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b GLYNDWR UNIVERSITY   (United Kingdom)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; RAMAN SPECTROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SURFACE STRUCTURE; THIN FILMS; VAPOR DEPOSITION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030235372     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00205-X     Document Type: Article

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